Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters

Abstract

A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.