Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications

2003 33rd European Microwave Conference, 2003 Pub Date : 2003-10-01 DOI:10.1109/EUMA.2003.340967

Min Park, H. Ahn, D. Kang, Hong-gu Ji, J. Mun, Hae-cheon Kim, K. Cho

引用次数: 13

Abstract

A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= ¿0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45% at 5 V under Vgs=0 V, GL=14.5 dB, OIP3=37.5 dBm.

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单电源，高线性，高效PHEMT功率器件和放大器，用于2 GHz和5 GHz WLAN应用

利用高性能准增强功率PHEMT技术实现了单电源、高线性度、高效率的功率器件和放大器MMIC。PHEMT电源器件Vth= 0.65 V, Vbdg=26 V, Vgs=0.2 V时Imax=144 mA/mm, Gm=340 mS/mm。当在功耗和效率之间进行匹配时，峰值IP3在2ghz和5.8 GHz时分别为40.5 dBm和37.0 dBm。在Vgs=0 V, GL=14.5 dB, OIP3=37.5 dBm的情况下，该功率放大器在5 V时实现了5.8 GHz的输出=27 dBm，相关PAE=45%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 33rd European Microwave Conference, 2003

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