Layout design of strained Si/SiGe HBT with segmented emitter to compensate the thermal effects

Abstract

Based on the established thermal network of strained Si/SiGe HBT with segmented emitter, the effect of segment spacing and segment number on the peak temperature is studied. Increase both of segment spacing and segment number could lower the peak temperature, decrease the heating coupling factor, and hence improve the temperature uniformity. Furthermore, a novel strained-Si SiGe HBT with multi-segmented emitter and non-uniform segment spacing is proposed to further compensate the self-heating effect and the thermal coupling effect.