Study on reflow process of SWIR FPA during flip-chip bonding technology

Cui Fan, Xue Li, X. Shao, Zhiheng Zeng, Hengjing Tang, Tao Li, H. Gong
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引用次数: 1

Abstract

Reflow soldering is the primary method for Flip-chip bonding without high bonding pressure. Reflow process during flip-chip technology in short wavelength infrared (SWIR) InGaAs/InP Focal Plane array (FPA) with indium solder was studied in this paper. In order to analyze the formation of Indium oxide and its effects on Indium bump reflow process. Indium bumps were investigated by X-ray Photoelectron Spectroscopy (XPS). The profiles of Indium bumps after reflow were observed by scanning electron microscopy (SEM). The interaction between Indium and the metal in under bump metallization (UBM) during reflow process was discussed. The current–voltage (I–V) curves of InGaAs/InP photodiodes were measured before and after the reflow process. The dark current density at 0.1 V reverse bias of InGaAs/InP photodiodes were studied. It was confirmed that the characteristics of InGaAs photodetectors haven’t degenerated after reflow in this paper.
倒装键合工艺中SWIR FPA回流过程的研究
回流焊是无高焊接压力的倒装芯片焊接的主要方法。研究了铟钎料在短波红外(SWIR) InGaAs/InP焦平面阵列(FPA)倒装工艺中的回流过程。为了分析氧化铟的形成及其对铟碰撞回流过程的影响。用x射线光电子能谱(XPS)研究了铟凸起。用扫描电镜观察了回流后铟凸起的形貌。讨论了凹凸下金属化过程中铟与金属之间的相互作用。测量了回流前后InGaAs/InP光电二极管的电流-电压(I-V)曲线。研究了0.1 V反向偏置下InGaAs/InP光电二极管的暗电流密度。本文证实了回流后InGaAs光电探测器的特性没有退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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