Influence of X-Ray Irradiation on Energy Pseudogap and Refractive Index of (Ga0.1In0.9)2Se3Films

M. Pop, M. Kranjčec, I. Studenyak, A. Solomon
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引用次数: 0

Abstract

Thermal evaporation technique was used to deposite $\gamma_{1}$ films. As-deposited thin films were irradiated by means of wideband radiation of Cu-anode X-ray tube at different exposition times. Spectral ellipsometry measurements were conducted in order to obtain refractive index and extinction coefficient dispersions. Optical transmission spectra of X-ray irradiated $(\text{Ga}_{X}\text{In}_{1\rightarrow x})_{2}\text{Se}_{3}$ films were measured depending on irradiation time. Parameters of Urbach absorption edge for X-ray irradiated $(\mathbf{Ga}_{0.1}\mathbf{In}_{0.9})_{2}\mathbf{Se}_{3}$ films were studied. The investigation revealed the nonlinear decrease of energy pseudogap together with nonlinear increase of Urbach energy and refractive index, as well as the increase of X-ray irradiation time.
x射线辐照对(Ga0.1In0.9) 2se3薄膜能量赝隙和折射率的影响
采用热蒸发技术沉积$\gamma_{1}$薄膜。采用cu阳极x射线管在不同曝光时间对砷沉积薄膜进行了宽带辐照。为了获得折射率和消光系数色散,进行了光谱椭偏测量。对$(\text{Ga}_{X}\text{In}_{1\rightarrow x})_{2}\text{Se}_{3}$ x射线辐照膜的透射光谱随辐照时间的变化进行了测量。研究了x射线辐照$(\mathbf{Ga}_{0.1}\mathbf{In}_{0.9})_{2}\mathbf{Se}_{3}$薄膜的乌尔巴赫吸收边参数。研究发现,能量赝隙非线性减小,乌尔巴赫能和折射率非线性增加,x射线辐照时间增加。
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