Shiquan Fan, Chenxi Yuan, Wu Miao, Raja Usman Tariq, M. Ye, Zheyi Yuan, Li Geng
{"title":"A Cross-Coupled Active Rectifier-Booster Regulator Integrated Circuit for Broadband Wireless Energy Harvesting System","authors":"Shiquan Fan, Chenxi Yuan, Wu Miao, Raja Usman Tariq, M. Ye, Zheyi Yuan, Li Geng","doi":"10.1109/IWS49314.2020.9359959","DOIUrl":null,"url":null,"abstract":"In this paper, a fully integrated 3-stage active recti-fier-booster regulator (RBR) is proposed. The discrete diodes which used in conventional RBR structure are completely replaced by standard power PMOS and NMOS in the new topology to realize fully integration. Cross-coupled driving technique is adopted to achieve self-driving of the power MOS switches without any additional functional circuit. Thus, the power consumption and size are both reduced. Finally, the RBR is fabricated by using standard 180nm CMOS process. The total active area is about 0.32 mm2. Experimental results show that the proposed on-chip RBR can provide 2.11 V output voltage under -10 dBm input power and 46% peak efficiency under -4 dBm. Besides, the designed RBR shows a wide-band range with high power conversion efficiency features. The excellent performance shows the wide practicality of the proposed design method for broadband wireless energy harvesting system.","PeriodicalId":301959,"journal":{"name":"2020 IEEE MTT-S International Wireless Symposium (IWS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS49314.2020.9359959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a fully integrated 3-stage active recti-fier-booster regulator (RBR) is proposed. The discrete diodes which used in conventional RBR structure are completely replaced by standard power PMOS and NMOS in the new topology to realize fully integration. Cross-coupled driving technique is adopted to achieve self-driving of the power MOS switches without any additional functional circuit. Thus, the power consumption and size are both reduced. Finally, the RBR is fabricated by using standard 180nm CMOS process. The total active area is about 0.32 mm2. Experimental results show that the proposed on-chip RBR can provide 2.11 V output voltage under -10 dBm input power and 46% peak efficiency under -4 dBm. Besides, the designed RBR shows a wide-band range with high power conversion efficiency features. The excellent performance shows the wide practicality of the proposed design method for broadband wireless energy harvesting system.