ZrO2 doped GeTe for aerospace applications

E. Chua, C. C. Yeap, M. Li, K. Lim, L. Law, W. J. Wang, E. Yeo, F. Ernult
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引用次数: 1

Abstract

Varying ZrO2 doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO2 at lower concentration but the crystallization improves as the concentration increases as depicted by the activation energy for different concentration. Thus it resulted in an optimum concentration for highest activation energy for better stability. ZrO2 concentration at 11% which has the highest activation energy of 3.64 eV and crystallization temperature of 210 °C with 10 years retention of 135 °C was fabricated, tested and compared with GeTe. Doped GeTe achieved power reduction of 55% as compared to GeTe and achieved endurance of 104 cycles.
ZrO2掺杂GeTe用于航空航天
制备并表征了原子率大于10%的ZrO2掺杂GeTe相变材料。在较低浓度下,ZrO2的掺入抑制了非晶掺杂GeTe的结晶,但不同浓度下的活化能表明,随着浓度的增加,非晶掺杂GeTe的结晶得到改善。因此,最佳浓度为最高的活化能,以获得更好的稳定性。制备了ZrO2浓度为11%,最高活化能为3.64 eV,结晶温度为210℃,保留时间为135℃的ZrO2,并对其进行了测试和比较。与GeTe相比,掺杂GeTe的功率降低了55%,并实现了104次循环的续航时间。
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