Compact semiconductor absorber mode-locked Nd:YAG laser

Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) Pub Date : 2000-09-10 DOI:10.1109/CLEOE.2000.909933

U. Griebner, M. Leitner, P. Glas, B. Ozygus, R. Hey, I. Daweritz

引用次数: 0

Abstract

Summary form only given. We report on laser action of an end-on diode-pumped Nd:YAG laser mode-locked by a multiple quantum well (MQW) saturable absorber. The absorber is especially designed to give a high modulation depth. The air cooled Nd:YAG gain-module, pumped by 18 W of fiber coupled diode emission delivers in a very compact configuration 6W of cw output power. This gain module is applied in a four-mirror type-Z cavity including a semiconductor saturable absorber mirror (SESAM).

查看原文本刊更多论文

紧凑型半导体吸收锁模Nd:YAG激光器

只提供摘要形式。本文报道了用多量子阱(MQW)可饱和吸收体锁模的端对二极管泵浦Nd:YAG激光器的激光作用。吸收器是专门设计来提供高调制深度的。风冷Nd:YAG增益模块由18w的光纤耦合二极管发射泵浦，在非常紧凑的配置下提供6W的连续输出功率。该增益模块应用于四镜型z腔，包括半导体可饱和吸收镜(SESAM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)

自引率

0.00%

发文量