Effect of Oxygen Plasma on Magnetoelectric Properties of NiFe2O4/PVDF Composites

A. Chaurasiya, R. Medwal, J. Vas, M. Mishra, Paul Lee Choon Keat, R. Rawat, P. Pal, Ashutosh Kumar Singh
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Abstract

Flexible multiferroic composite with enhanced dielectric property is a potential candidate for future memory devices. Here, 0–3 type of artificial multiferroic was developed to enhance the dielectric property of the multiferroic composite. As the loading of the magnetic nanoparticles in the PVDF matrix increases from 10 wt% to 40 wt% the electroactive phase of the composite increases probed by dielectric measurement. The increase in the loading of magnetic nanoparticles inside the PVDF matrix from 10 to 40 wt% also control the dielectric losses of the samples. The vibrating sample magnetometer measurement was performed for the composite films with varying composition and found that the magnetic moment is increased linearly with the loading of magnetic nanoparticles. Our 0–3 type multiferroic composite device is nonvolatile in nature which can form the basis for future nonvolatile magnetic memory devices. To further improve the dielectric and magnetoelectric property of the multiferroic composite samples, different wt % of NiFe2O4 NPs was exposed by dense plasma focus device in the oxygen environment. After oxygen plasma exposure the electrical and magnetic properties measurement performed using I-V and magnetoelectric measurement setup respectively. The enhancement in the magnetoelectric properties has been observed after the plasma treatment. Thus, it suggests that plasma modification could be a promising approach to enhance the magnetoelectric coupling for future magnetoelectric devices.
氧等离子体对NiFe2O4/PVDF复合材料磁电性能的影响
具有增强介电性能的柔性多铁复合材料是未来存储器件的潜在候选材料。为了提高多铁复合材料的介电性能,研制了0-3型人工多铁材料。当磁性纳米颗粒在PVDF基体中的负载从10 wt%增加到40 wt%时,通过介电测量探测到复合材料的电活性相增加。磁性纳米颗粒在PVDF基体内的负载从10%增加到40%也控制了样品的介电损耗。用振动样品磁强计对不同成分的复合膜进行了测量,发现磁矩随磁性纳米粒子的负载呈线性增加。我们的0-3型多铁性复合器件本质上是非易失性的,可以为未来的非易失性磁存储器件奠定基础。为了进一步提高多铁复合材料样品的介电性能和磁电性能,采用致密等离子体聚焦装置将不同wt %的NiFe2O4 NPs暴露于氧环境中。氧等离子体暴露后,分别使用I-V和磁电测量装置进行电学和磁学性能测量。等离子体处理后,材料的磁电性能得到了增强。因此,等离子体修饰可能是未来磁电器件中增强磁电耦合的一种有前途的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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