A Novel Controllable BIST Circuit for embedded SRAM

Zhiting Lin, Chunyu Peng, Kun Wang
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引用次数: 1

Abstract

With increasingly stringent requirements for memory test, the complexity of the test algorithm is increasing. This will make BIST (Build-In-Self-Test) circuit more complex and the area of BIST circuit larger. This paper proposes a novel controllable BIST circuit. The controllable BIST circuit provides a cost-effective solution that supports a variety of March algorithms and SRAM embedded testing operation modes. It controls the test patterns with three additional input ports. And it indicates the algorithm progress, the test result and the number of fails with three output ports. To achieve test patterns generation, analy-sis and test results recording, the proposed BIST circuit contains five internal functional modules, which are Address Gener-ator, Control Generator, Data Generator, Data Comparator and Fail Accumulator. The test patterns of the proposed BIST cir-cuit are controlled by external signals. It is not only suitable for any existing march algorithms but also leaves room for ex-tension if needed.
一种新型嵌入式SRAM可控BIST电路
随着人们对内存测试的要求越来越严格,测试算法的复杂度也越来越高。这将使自检电路更复杂,自检电路的面积更大。提出了一种新型的可控BIST电路。可控的BIST电路提供了一种经济有效的解决方案,支持各种March算法和SRAM嵌入式测试操作模式。它通过三个额外的输入端口控制测试模式。并通过三个输出端口显示算法进度、测试结果和失败次数。为了实现测试模式的生成、分析和测试结果的记录,本文提出的BIST电路内部包含地址产生器、控制产生器、数据产生器、数据比较器和故障累加器五个功能模块。所提出的BIST电路的测试模式由外部信号控制。它不仅适用于任何现有的行军算法,而且在需要时还留有扩展的余地。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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