Simulation analysis of UV –A band LEDs with BGaN single quantum well using SiC substrate for medical applications

Abstract

The influence of Aluminum Gallium Nitride (AlGaN) Light Emitting Diode (LED) with Boron doped GaN well (BGaN) optical performance are examined in the research article. The investigation results are obtained by adopting physical simulator known as Technology Computer Aided Design (TCAD). BGaN LEDs with single quantum Wells (QW) are measured with Silicon carbide (SiC) substrate. The models such as Auger recombination, polarization and radiative recombination’s are utilized for the simulations. The obtained simulation results using TCAD specifies that quantum efficiency and luminous power of BGaN LEDs are efficient which falls under the wavelength of 360nm (UV-A band) and best suitable device for medical applications such as sterilization, bacterial removal etc.