Tunable RF GaN-power transistor implementing impedance matching networks based on BST thick films

Abstract

In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.