{"title":"The Finite Difference Solution of Two- and Three-Dimensional Semiconductor Problems on the Connection Machine","authors":"K. Dalton, E. Hensel, S. Castillo, K. Ng","doi":"10.1109/DMCC.1991.633216","DOIUrl":null,"url":null,"abstract":"A study of the finite difSerence solution of the nonlinear partial differential equations governing twoand three-dimensional semiconductor devices is conducted on a SIMD computer. This nonlinear system is solved using Jacobi iteration and successive-under-relaxation. Row scaling and a zero order regularizer are used to aid in convergence. On a 16K CM-2 problems with up to 16.7 million unknowns have been solved. Problems of this size have not previously been reported. The ability to accurately model larger and more realistic three-dimensional devices is necessary to gain a greater physical understanding of their behavior.","PeriodicalId":313314,"journal":{"name":"The Sixth Distributed Memory Computing Conference, 1991. Proceedings","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Sixth Distributed Memory Computing Conference, 1991. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DMCC.1991.633216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A study of the finite difSerence solution of the nonlinear partial differential equations governing twoand three-dimensional semiconductor devices is conducted on a SIMD computer. This nonlinear system is solved using Jacobi iteration and successive-under-relaxation. Row scaling and a zero order regularizer are used to aid in convergence. On a 16K CM-2 problems with up to 16.7 million unknowns have been solved. Problems of this size have not previously been reported. The ability to accurately model larger and more realistic three-dimensional devices is necessary to gain a greater physical understanding of their behavior.