A 0.8V/0.6V 2.2μW Time-Domain Analog Front-End with $540\text{mV}_{\text{pp}}$ Input Range, 81.6dB SNDR and $80\mathrm{M}\Omega$ Input Impedance

Liheng Liu, Tianxiang Qu, Pengjie Wang, Yao Zhang, Zhiliang Hong, Jiawei Xu
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Abstract

The next generation autonomous sensor nodes are being developed towards ultra-low-power with on-node signal processing capability. The former facilitates battery-less and miniaturized sensors relying on harvested energy, while the latter enables intelligent System-on-Chip (SoC) to sense and process multimodal parameters locally on the sensor nodes. As for analog front-end (AFE), a straightforward solution for low power and digital compatibility is to reduce its supply voltage to the sub-volt range. However, supply scaling is less friendly to conventional AFEs, which often require large dynamic range (DR) and high linearity, Furthermore, practical considerations of low noise, high input-impedance $(\mathrm{Z}_{\text{in}})$ and sensor-dependent bandwidth (BW) further exacerbate the challenges to comply with versatile sensors. To realize the low-voltage AFE, time-domain (TD) direct digitization architectures [1]–[5] were proposed (Fig. 1). The $\mathrm{G}_{\mathrm{m}}-\mathrm{C}$ based delta-sigma modulator $(\Delta\Sigma \mathrm{M})$ with a built-in TD loop filter benefits from high input impedance and higher order noise shaping [1], but the $\mathrm{G}_{\mathrm{m}}$ exhibits nonlinearity for a large input signal. Alternatively, the VCO-based AFEs provide better supply voltage scalability and inherent ${1}^{\text{st}}$-order noise shaping. The open-loop VCO-based AFE [2] benefits from a small chip area, but suffering from the tradeoff between linearity and input range. While the closed-loop VCO-based AFE solves this issue [3]–[5], this topology often needs a highly linear feedback DAC that notably reduces the input impedance of the AFE, unless impedance boosting buffers are used [6]. Besides, the closed-loop VCO based AFEs needs to be clocked continuously, resulting in power overhead.
一个0.8V/0.6V 2.2μW时域模拟前端,$540\text{mV}_{\text{pp}}$输入范围,81.6dB SNDR和$80\ mathm {M}\Omega$输入阻抗
下一代自主传感器节点正朝着超低功耗、节点上信号处理能力的方向发展。前者促进了依靠收集能量的无电池和小型化传感器,而后者使智能片上系统(SoC)能够在传感器节点上本地感知和处理多模态参数。对于模拟前端(AFE),为了低功耗和数字兼容,一个简单的解决方案是将其供电电压降低到亚伏范围。然而,对于通常需要大动态范围(DR)和高线性度的传统afe来说,电源缩放不太友好。此外,低噪声、高输入阻抗$(\mathrm{Z}_{\text{in}})$和传感器相关带宽(BW)的实际考虑进一步加剧了满足多功能传感器的挑战。为了实现低压AFE,提出了时域(TD)直接数字化架构[1]-[5](图1)。基于$\mathrm{G}_{\mathrm{m}}-\mathrm{C}$的delta-sigma调制器$(\Delta\Sigma \mathrm{M})$具有内置TD环路滤波器,可从高输入阻抗和高阶噪声整形中获益[1],但$\mathrm{G}_{\mathrm{m}}$在大输入信号中表现出非线性。另外,基于vco的afe提供更好的电源电压可扩展性和固有的${1}^{\text{st}}$阶噪声整形。基于vco的开环AFE[2]得益于芯片面积小,但在线性度和输入范围之间需要权衡。虽然基于vco的闭环AFE解决了这个问题[3]-[5],但这种拓扑结构通常需要一个高度线性反馈的DAC,显著降低AFE的输入阻抗,除非使用阻抗提升缓冲器[6]。此外,基于VCO的闭环afe需要连续进行时钟处理,从而导致功率开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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