{"title":"Hybrid semiconductive/high temperature superconductive Ku-band oscillator and amplifier MICs","authors":"J. Smuk, M. Stubbs, J. Wight","doi":"10.1109/MWSYM.1992.188019","DOIUrl":null,"url":null,"abstract":"The design, fabrication, and testing of hybrid semiconductive/high-temperature superconductive (HTSC) Ku-band microwave integrated circuits (MICs) operating at cryogenic temperatures are described. The first cooled feedback oscillators using GaAs FET monolithic microwave integrated circuit (MMIC) los-noise amplifiers for gain and a high-Q TlBaCaCuO linear resonator for stabilization is presented together with a low-noise high electron mobility transistor (HEMT) amplifier using TlBaCaCuO distributed stubs for matching. Both demonstrate that HTSC and semiconductive elements can be successfully integrated.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The design, fabrication, and testing of hybrid semiconductive/high-temperature superconductive (HTSC) Ku-band microwave integrated circuits (MICs) operating at cryogenic temperatures are described. The first cooled feedback oscillators using GaAs FET monolithic microwave integrated circuit (MMIC) los-noise amplifiers for gain and a high-Q TlBaCaCuO linear resonator for stabilization is presented together with a low-noise high electron mobility transistor (HEMT) amplifier using TlBaCaCuO distributed stubs for matching. Both demonstrate that HTSC and semiconductive elements can be successfully integrated.<>