Effect of frontal interface configuration on electronic properties of organic-inorganic hybrid solar cells

2015 12th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2015-12-17 DOI:10.1109/ICEEE.2015.7357949

A. Olivares, H. E. Martinez-Mateo, I. Cosme, S. Mansurova, A. Kosarev

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引用次数: 1

Abstract

Inorganic-organic hybrid solar cells with different frontal interface configurations have been studied. Spin-coated conducting polymer Poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) or boron doped a-Si:H films were used as p-type layer. Intrinsic amorphous silicon (a-Si:H) films and P3HT:PCBM heterojunctions were investigated as absorbing layers. Solar cell performance was characterized by current-voltage measurements under AM1.5 illumination and spectral measurements in the range from hν = 1.5 to 3.5 eV. The stack structure with a-Si:H (absorbing layer)/PEDOT:PSS (p-layer) interface exhibited the highest short circuit current density (Jsc). The best open circuit voltage (Voc) as a large as 0.73 V was observed in the stack structure with a-Si:H/P3HT:PCBM heterojunction as absorbing layer. Finally, in the spectral response of hybrid configurations is possible to distinguish the Jsc contributions of both organic and inorganic layers.

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正面界面构型对有机-无机杂化太阳能电池电子性能的影响

研究了具有不同正面界面结构的无机-有机混合太阳能电池。采用自旋包覆导电聚合物聚(3,4乙烯二氧噻吩):聚(4-苯乙烯磺酸盐)(PEDOT:PSS)或掺硼的a-Si:H薄膜作为p型层。本征非晶硅(a-Si:H)薄膜和P3HT:PCBM异质结作为吸波层进行了研究。通过AM1.5照明下的电流电压测量和hν = 1.5 ~ 3.5 eV范围内的光谱测量来表征太阳能电池的性能。具有a-Si:H(吸收层)/PEDOT:PSS (p层)界面的堆叠结构具有最高的短路电流密度(Jsc)。以a- si:H/P3HT:PCBM异质结为吸收层的叠层结构的最佳开路电压(Voc)高达0.73 V。最后，在杂化结构的光谱响应中，可以区分有机层和无机层对Jsc的贡献。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 12th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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