A 1mm2 flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications

C. Hale, R. Baeten
{"title":"A 1mm2 flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications","authors":"C. Hale, R. Baeten","doi":"10.1109/RWS.2010.5434209","DOIUrl":null,"url":null,"abstract":"This paper presents a 1mm2 Cu pillar flip chip SP3T/LNA RFIC targeted for use in 802.11b/g front-ends. The SP3T switch enables WLAN transmit/receive and Bluetooth modes of operation. This switch exhibits 0.6dB insertion loss per branch and delivers 802.11g linear performance up to +21dBm output power. A single-stage LNA with a bypass mode is connected after the WLAN Rx branch to increase overall receiver sensitivity and dynamic range. The LNA achieved 1.9dB NF with a typical 11.5dB small-signal gain, including the switch loss. This die occupies only 25% of the footprint of similar existing QFN style WLAN front ends.","PeriodicalId":334671,"journal":{"name":"2010 IEEE Radio and Wireless Symposium (RWS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2010.5434209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents a 1mm2 Cu pillar flip chip SP3T/LNA RFIC targeted for use in 802.11b/g front-ends. The SP3T switch enables WLAN transmit/receive and Bluetooth modes of operation. This switch exhibits 0.6dB insertion loss per branch and delivers 802.11g linear performance up to +21dBm output power. A single-stage LNA with a bypass mode is connected after the WLAN Rx branch to increase overall receiver sensitivity and dynamic range. The LNA achieved 1.9dB NF with a typical 11.5dB small-signal gain, including the switch loss. This die occupies only 25% of the footprint of similar existing QFN style WLAN front ends.
用于802.11b/g应用的1mm2倒装芯片SP3T开关和低噪声放大器RFIC FEM
本文提出了一种1mm2铜柱倒装芯片SP3T/LNA RFIC,用于802.11b/g前端。SP3T开关启用WLAN发送/接收和蓝牙操作模式。该开关每个分支的插入损耗为0.6dB,并提供高达+21dBm输出功率的802.11g线性性能。在WLAN Rx支路后连接bypass模式的单级LNA,以提高整体接收器灵敏度和动态范围。LNA实现1.9dB NF,典型的小信号增益为11.5dB,包括开关损耗。该芯片仅占现有类似QFN风格WLAN前端占地面积的25%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信