A TCAD calibration methodology

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259036

V. Laino, M. Pfeiffer, A. Witzig, W. Fichtner

引用次数: 2

Abstract

A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical optimization tools. The device under investigation is a molecular beam epitaxy (MBE) grown InGaAs/AlGaAs narrow stripe laser with graded-index carrier confinement (GRICC) and a single quantum-well (SQW) active region.

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TCAD校准方法

提出了一种系统的激光仿真环境标定方法。这使得设备设计人员可以在短时间内获得测量和模拟之间的良好一致性。该程序基于激光模拟器DESSIS-Laser和TCAD环境GENESISe，提供了预处理、后处理和数值优化工具。所研究的器件是具有梯度折射率载流子约束(GRICC)和单量子阱(SQW)有源区的分子束外延(MBE)生长InGaAs/AlGaAs窄条纹激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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