Tunnel Magnetoresistance Effect in CoFeB/MgO/Heusler Alloys(Co2FeSi, Co2MnSi) Tunnel Junctions

T. Daibou, M. Shinano, Y. Sakuraba, M. Oogane, T. Miyazaki
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Abstract

In this study, we investigated the TMR effects in CoFeB/MgO/Heusler alloys (Co2FeSi and Co2MnSi) magnetic tunnel junctions. Both Co2FeSi and Co2MnSi heusler alloys have half-metallic band structure and high Curie temperature of 1200K and 985K, respectively. Moreover, the lattice mismatch between the Heusler alloys and MgO barrier is relatively small, which indicates that the highly textured Heusler alloys can be grown on the MgO barrier. In addition, it could be noted that spin-fluctuation at finite temperature can reduce spin-polarization of Heusler alloys even though the MgO/Heusler alloys is ideal HMFs at low temperature.
CoFeB/MgO/Heusler合金(Co2FeSi, Co2MnSi)隧道结的隧道磁阻效应
在本研究中,我们研究了TMR对CoFeB/MgO/Heusler合金(Co2FeSi和Co2MnSi)磁性隧道结的影响。Co2FeSi和Co2MnSi heusler合金均具有半金属带结构,居里温度分别为1200K和985K。此外,Heusler合金与MgO势垒之间的晶格失配较小,表明高织构的Heusler合金可以在MgO势垒上生长。此外,尽管MgO/Heusler合金在低温下是理想的HMFs,但有限温度下的自旋波动可以降低Heusler合金的自旋极化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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