Impact of functionalization patterns on the performance of CNTFETs

Abstract

Covalent functionalization of carbon nanotubes (CNTs) might be an option to optimize the behavior of CNT field effect transistors (FETs) [1] (despite all related technological problems). In principle, the atoms or molecules used for functionalizing are placed randomly along the CNT or they are high-ordered in decoration patterns. Here, only high-ordered functionalization patterns are studied (i) to convert metallic CNTs into semiconducting CNTs and (ii) to reduce or to increase the ambipolarity of a semiconducting CNT.