A Terahertz-wave Double-Band Transition from Substrate Integrated Waveguide to Rectangular Waveguide for InP MMIC

Songyuan Yang, Weihua Yu, Xinxin Yang, X. Lv, H. Zirath, Z. He
{"title":"A Terahertz-wave Double-Band Transition from Substrate Integrated Waveguide to Rectangular Waveguide for InP MMIC","authors":"Songyuan Yang, Weihua Yu, Xinxin Yang, X. Lv, H. Zirath, Z. He","doi":"10.1109/CICTA.2018.8706119","DOIUrl":null,"url":null,"abstract":"A double-band terahertz slot transition from the substrate integrated waveguide (SIW) to the rectangular waveguide (RWG) is presented. With better than 10 dB return loss (RL) and 1.3 dB insertion loss (IL) demonstrated by full-EM simulation, the frequency bands of a designed sample are from 164.6 GHz to 182.76 GHz and from 238 GHz to 257.9 GHz. The presented transition is suitable for multilayer MMIC process, especially for the substrate with high loss and high dielectric constant.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A double-band terahertz slot transition from the substrate integrated waveguide (SIW) to the rectangular waveguide (RWG) is presented. With better than 10 dB return loss (RL) and 1.3 dB insertion loss (IL) demonstrated by full-EM simulation, the frequency bands of a designed sample are from 164.6 GHz to 182.76 GHz and from 238 GHz to 257.9 GHz. The presented transition is suitable for multilayer MMIC process, especially for the substrate with high loss and high dielectric constant.
InP MMIC中基板集成波导到矩形波导的太赫兹双波段跃迁
提出了一种从衬底集成波导到矩形波导的双频段太赫兹缝隙过渡。全电磁仿真结果表明,设计样品的回波损耗(RL)小于10 dB,插入损耗(IL)小于1.3 dB,频率范围分别为164.6 GHz ~ 182.76 GHz和238 GHz ~ 257.9 GHz。所提出的过渡适用于多层MMIC工艺,尤其适用于高损耗、高介电常数的衬底。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信