K. Guarini, C. T. Black, Y. Zhang, I. Babich, E. Sikorski, L. Gignac
{"title":"Low voltage, scalable nanocrystal flash memory fabricated by templated self assembly","authors":"K. Guarini, C. T. Black, Y. Zhang, I. Babich, E. Sikorski, L. Gignac","doi":"10.1109/IEDM.2003.1269340","DOIUrl":null,"url":null,"abstract":"We introduce a new method for building nanocrystal flash memory devices that achieves precise control of nanocrystal size and position. Nanocrystal dimensions are defined via polymer self assembly, facilitating device scaling. Devices exhibit low voltage memory operation with promising retention and endurance properties.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
Abstract
We introduce a new method for building nanocrystal flash memory devices that achieves precise control of nanocrystal size and position. Nanocrystal dimensions are defined via polymer self assembly, facilitating device scaling. Devices exhibit low voltage memory operation with promising retention and endurance properties.