Comparison of Two-Types of Monolithic 3D Inverter Consisting of MOSFETs and Junctionless FETs

Abstract

The electrical coupling with stacked transistors in two types of monolithic 3D inverter (M3DINV) are investigated. One is stacked with n-type and p-type MOSFETs and another is stacked with n-type and p-type junctionless field-effect transistors. The coupling of stacked transistors in two-types of M3DINV is investigated in terms of various thickness of interlayer distance (ILD) between stacked transistors. When the thickness of both ILDs between stacked JLFETs and stacked MOSFETs are more than 30 nm, both interactions between the stacked JLFETs and stacked MOSFETs can be neglected.