Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform

Abstract

We demonstrate uncooled operation of an O-band membrane InGaAlAs electro-absorption modulator (EAM) on a Si platform. The EAM exhibits a static extinction ratio of more than 2.9 dB, insertion loss of less than 6.2 dB, and 100-Gbit/s non-return-to-zero operations from 25 to 80°C.