Surface structure study and structure determination of (√3 × √3)R 30° phase of Si-adsorption on Ni(111) by LEED

M. Sazzadur Rahman, M. Kibria, T. Nakagawa, S. Mizuno
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Abstract

The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni2Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.
Ni(111)表面硅吸附(√3 ×√3)R 30°相的表面结构研究及LEED结构测定
采用LEED和AES研究了Si在Ni(111)上的相演化。除了先前报道的(√3 ×√3)r30°相外,还发现了一个新的Si on Ni(111)相。利用低能电子衍射(LEED)分析确定了(√3 ×√3)R 30°相的表面结构和Ni2Si的化学成分。所得的硅化镍有助于理解半导体-金属界面上肖特基势垒的形成。
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