BiJFet Array Chip MH2XA030 — a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits

O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova
{"title":"BiJFet Array Chip MH2XA030 — a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits","authors":"O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova","doi":"10.1109/EEXPOLYTECH.2018.8564415","DOIUrl":null,"url":null,"abstract":"A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.","PeriodicalId":296618,"journal":{"name":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEXPOLYTECH.2018.8564415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

Abstract

A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.
BiJFet阵列芯片MH2XA030 -一种抗辐射低温模拟集成电路的设计工具
一种新的BiJFet阵列芯片(AC) MH2XA030设计用于加速模拟集成电路(ic)的创建,在穿透辐射(中子和快速电子的通量,辐射累积剂量,重带电粒子的单效应)和极低温度(高达- 197°C)的影响下保持其性能。描述了阵列芯片的拓扑结构及其宏单元。指出了基于交流的抗辐射低温模拟集成电路的原理图设计特点。给出了交流电压比较器、两个运算放大器和两个差分运算放大器的主要模拟元件的电路仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信