Band structure and characterization of dilute Ge:C alloys

C. Stephenson, William A. O. Brien, M. Penninger, Miriam M. Gillett-Kunnath, J. Zajicek, W. Schneider, R. Kudrawiec, M. Wistey
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Abstract

Experimental growth of Ge:C with 0.2% C shows a splitting in the direct conduction band valley of 50 meV. Ab initio simulations of the band structure show a gamma valley decrease of 170 meV/%C.
稀Ge:C合金的能带结构与表征
在0.2% C的条件下,Ge:C在50 meV的直接传导带谷中发生了分裂。带结构的从头算模拟表明,γ谷降低了170 meV/%C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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