Enhancing Piezo-MEMS Transformer Performance

S. Bedair, R. Rudy, Lain Kierzewskr, J. Pulskamp, B. Power, J. Martin, Raphael Luo, Ryan Cable, V. Tseng, R. Benoit
{"title":"Enhancing Piezo-MEMS Transformer Performance","authors":"S. Bedair, R. Rudy, Lain Kierzewskr, J. Pulskamp, B. Power, J. Martin, Raphael Luo, Ryan Cable, V. Tseng, R. Benoit","doi":"10.1109/FCS.2018.8597575","DOIUrl":null,"url":null,"abstract":"This paper documents an architecture approach using extensional mode harmonics to improve the figures of merit (TxFoM) of thin-film piezoelectric MEMS transformers. Modeling of this approach reveals multi-fold improvements in TxFoM as well as the significance and impact of transducer electrical quality factor. Experimental results with PZT-on· $4\\mu \\mathrm{m}$ Si and AlN transformers verify this architecture approach and show up to 4.3X and 4.4X TxFoM improvements, respectively. These are demonstrated with −63MHz PZT-on-Si and ~69 MHz AlN piezoelectric transformers. Measurement results also reveal the importance of routing resistance and parasitics and their impact on electrical quality factor $Q_{elec}$.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Frequency Control Symposium (IFCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FCS.2018.8597575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper documents an architecture approach using extensional mode harmonics to improve the figures of merit (TxFoM) of thin-film piezoelectric MEMS transformers. Modeling of this approach reveals multi-fold improvements in TxFoM as well as the significance and impact of transducer electrical quality factor. Experimental results with PZT-on· $4\mu \mathrm{m}$ Si and AlN transformers verify this architecture approach and show up to 4.3X and 4.4X TxFoM improvements, respectively. These are demonstrated with −63MHz PZT-on-Si and ~69 MHz AlN piezoelectric transformers. Measurement results also reveal the importance of routing resistance and parasitics and their impact on electrical quality factor $Q_{elec}$.
提高压电- mems变压器性能
本文提出了一种利用外延模谐波来改善薄膜压电MEMS变压器的品质因数(TxFoM)的方法。该方法的建模揭示了TxFoM的多重改进以及换能器电气质量因子的重要性和影响。PZT-on·$4\mu \ mathm {m}$ Si和AlN变压器的实验结果验证了这种架构方法,并分别显示了4.3倍和4.4倍的TxFoM改进。这些用- 63MHz PZT-on-Si和~ 69mhz AlN压电变压器进行了验证。测量结果还揭示了布线电阻和寄生的重要性及其对电气质量因子Q_{elec}$的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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