Auger recombination in InAs: Role of spin-orbit coupling and phonons

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528804

Jimmy‐Xuan Shen, D. Steiauf, E. Kioupakis, C. G. Van de Walle

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Abstract

Indium arsenide (InAs), with a low band gap of 0.35 eV, is used in long-wavelength photo-detectors, lasers, photovoltaic junctions and a host of other semiconductor devices. Very high Auger recombination coefficients (ranging from 10^-27~10^-26 cm⁶s^-1) have been measured in this material. Here, we present first-principles-based investigations of Auger recombination processes in InAs. For the direct process, we calculate an Auger coefficient of 1.6 × 10^-27 cm⁶s^-1; for the indirect phonon-assisted process, the coefficient is 1.7 × 10^-29 cm⁶s^-1. Our results elucidate the role of strong spin-orbit coupling: in InAs, the spin-orbit splitting of the valence band is close in magnitude to the band gap, allowing for efficient excitation of Auger holes and leading to a significant enhancement of the Auger recombination coefficient.

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InAs中的俄歇复合:自旋轨道耦合和声子的作用

砷化铟(InAs)具有0.35 eV的低带隙，用于长波光电探测器、激光器、光伏结和许多其他半导体器件。在这种材料中测得非常高的俄歇复合系数(范围从10-27~10-26 cm6s-1)。在这里，我们提出了基于第一性原理的俄歇复合过程的研究。对于直接过程，我们计算出俄歇系数为1.6 × 10-27 cm6s-1;对于间接声子辅助过程，该系数为1.7 × 10-29 cm6s-1。我们的结果阐明了强自旋轨道耦合的作用:在InAs中，价带的自旋轨道分裂的幅度接近带隙，允许有效激发俄歇空穴并导致俄歇复合系数的显着增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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