Synthesis and characterization of Gallium Nitride nanocrystals

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441068

V. Ganesh, Subra Suresh, S. Sudhakar, T. Premkumar, K. Baskar

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Abstract

A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl3) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH3) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga2O3, 2GaONO3.N2O5 and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.

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氮化镓纳米晶的合成与表征

本文讨论了以三氯化镓(GaCl3)和乙二胺四乙酸(EDTA)为原料合成氮化镓(GaN)粉末的简便方法。在氨(NH3)气氛中，在600℃、700℃、800℃和900℃的温度下，通过镓- edta配合物的硝化反应合成了GaN纳米晶体。x射线衍射分析表明，在900℃下合成的化合物形成了单相六方氮化镓。而另一种低温合成则得到了β-Ga2O3, 2GaONO3的混合相。N2O5和GaN。扫描电镜图像显示颗粒呈团块状。通过透射电子显微镜发现，颗粒的平均尺寸为~ 20 nm。能量色散x射线衍射分析显示合成化合物的元素组成随温度的变化。室温光致发光在3.46 eV下表现出GaN的带边发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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