A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, A. Martinez
{"title":"Influence of textured interfaces in the performance of a-Si:H double-junction solar cell","authors":"A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, A. Martinez","doi":"10.1109/IWCE.2014.6865860","DOIUrl":null,"url":null,"abstract":"In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle α. The optimum roughness for the a-Si:H/a-Si:H solar cell was obtained for α = 26°. For this angle, the current density-voltage (J-V) characteristic has a good agreement with the J-V experimental data. The optimum value of α is close to the characteristics of an Asahi U-type texture used in the manufacturing process for the TCO and it generates the maximum electron density in the intrinsic layers.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2014.6865860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle α. The optimum roughness for the a-Si:H/a-Si:H solar cell was obtained for α = 26°. For this angle, the current density-voltage (J-V) characteristic has a good agreement with the J-V experimental data. The optimum value of α is close to the characteristics of an Asahi U-type texture used in the manufacturing process for the TCO and it generates the maximum electron density in the intrinsic layers.