Direct parameter extraction techniques for a new poly-Si TFT model

Abstract

We describe direct extraction techniques for the most important parameters of a new physics-based polysilicon (poly-Si) TFT model, suitable for circuit simulation. The physics-based model covers all operating regimes using continuous functions, includes short-channel effects and has been validated for devices of channel lengths down to 2 /spl mu/m. In spite of a small parameter set, the model includes the necessary dependencies on channel length.