Takashi Ichikawa, A. Uchiyama, Kohei Shibata, S. Iida, Sang-yeop Lee, N. Ishihara, K. Machida, K. Masu, Hiroyuki Ito
{"title":"A 3-D Capacitive-Detection Electrode for a Single Gold Proof-Mass Three-Axis MEMS Accelerometer","authors":"Takashi Ichikawa, A. Uchiyama, Kohei Shibata, S. Iida, Sang-yeop Lee, N. Ishihara, K. Machida, K. Masu, Hiroyuki Ito","doi":"10.1109/INERTIAL51137.2021.9430475","DOIUrl":null,"url":null,"abstract":"This paper describes a novel capacitive-detection electrode for a single gold proof-mass three-axis MEMS (microelectromechanical systems) accelerometer. We propose a 3-D capacitive-detection electrode (3-DCE) for a high and uniform sensitivity to sense micro-G (G=9.Sm/s2) level. Based on the analysis in terms of the sensitivity and the Brownian noise BN, we design and fabricate the device with 3-DCE by the multi-metal layer technology for a post-CMOS process. The experimental results show that the obtained BNis 0.16 µG/√Hz and the sensitivities of X-, Y-, and Z-axis are 162, 210, and 341 fF /G, respectively.","PeriodicalId":424028,"journal":{"name":"2021 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INERTIAL51137.2021.9430475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes a novel capacitive-detection electrode for a single gold proof-mass three-axis MEMS (microelectromechanical systems) accelerometer. We propose a 3-D capacitive-detection electrode (3-DCE) for a high and uniform sensitivity to sense micro-G (G=9.Sm/s2) level. Based on the analysis in terms of the sensitivity and the Brownian noise BN, we design and fabricate the device with 3-DCE by the multi-metal layer technology for a post-CMOS process. The experimental results show that the obtained BNis 0.16 µG/√Hz and the sensitivities of X-, Y-, and Z-axis are 162, 210, and 341 fF /G, respectively.