T. Onoye, T. Masaki, Y. Morimoto, Y. Sato, I. Shirakawa
{"title":"HDTV level MPEG2 video decoder VLSI","authors":"T. Onoye, T. Masaki, Y. Morimoto, Y. Sato, I. Shirakawa","doi":"10.1109/TENCON.1995.496442","DOIUrl":null,"url":null,"abstract":"A novel architecture for an HDTV level MPEG2 decoder is developed, which consists of specific functional macrocells and macroblock level pipeline buffers. Owing to the sophisticated I/O interface among macrocells, macroblock level pipeline buffers are successfully incorporated with functional macrocells. A new organization of frame memory and interface is also devised. The designed decoder contains 454 K transistors, and occupies 81.0 mm/sup 2/ with a 0.6 /spl mu/m triple-metal CMOS technology.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A novel architecture for an HDTV level MPEG2 decoder is developed, which consists of specific functional macrocells and macroblock level pipeline buffers. Owing to the sophisticated I/O interface among macrocells, macroblock level pipeline buffers are successfully incorporated with functional macrocells. A new organization of frame memory and interface is also devised. The designed decoder contains 454 K transistors, and occupies 81.0 mm/sup 2/ with a 0.6 /spl mu/m triple-metal CMOS technology.