Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852773

K. Matsuo, T. Saito, A. Yagishita, T. Iinuma, A. Murakoshi, K. Nakajima, S. Omoto, K. Suguro

引用次数: 6

Abstract

Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.

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具有Co硅化源极/漏极和高k栅极电介质的大马士革金属栅极mosfet

成功制备了具有Co硅化源极/漏极和高k介电体的Damascene金属栅极mosfet，没有CoSi/sub /薄膜的团聚。通过151级CMOS环形振荡器，获得了良好的晶体管特性，并证实了较短的逆变器延迟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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