Analysis of Multilayer Quantum Dot for Solar Cells

Abstract

The proposed work explains the absorption property of different material which can be used for the formation of Quantum Dot and their use in solar cells. By using property of Intermediate Band Gap of Quantum Dot efficiency of solar cells can also be increased. Along with it, it's found that absorption of Quantum Dot Depends on the angle by which light falls on them and in most of the cases its maximum when light falls perpendicularly on the Quantum Dot except the Quantum Dot of GaN-InN-GaN layers. Main advantage found to use Quantum Dot is that along with visible and Infrared region of light they also absorb rays of ultraviolet region which was one of the issue with Silicon based solar cell (along with their poor efficiency).