Memristor-based Reconfigurable Circuits: Challenges in Implementation

N. Dao, Dirk Koch
{"title":"Memristor-based Reconfigurable Circuits: Challenges in Implementation","authors":"N. Dao, Dirk Koch","doi":"10.1109/ICEIC49074.2020.9051174","DOIUrl":null,"url":null,"abstract":"The emergence of memristor technologies has recently received much attention due to their promising features, expecting to be a key driver in the post-CMOS era. With its ultra-low power, higher density capability and non-volatile characteristics, memristor technology is considered as the best candidate to replace SRAM cells or be employed for routing in digital reconfigurable systems. Although memristor-based reconfigurable circuits can offer many advantages over the conventional CMOS designs, limitations in the utilization of memristor technologies such as electroforming or programming structures have not been thoroughly considered and discussed. This work looks into recent trends in exploiting memristor technologies in reconfigurable circuits and then discusses implementation challenges like memristor programming, reliability and operation of memristor-based memory cells for digitally reconfigurable circuits.","PeriodicalId":271345,"journal":{"name":"2020 International Conference on Electronics, Information, and Communication (ICEIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Electronics, Information, and Communication (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEIC49074.2020.9051174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The emergence of memristor technologies has recently received much attention due to their promising features, expecting to be a key driver in the post-CMOS era. With its ultra-low power, higher density capability and non-volatile characteristics, memristor technology is considered as the best candidate to replace SRAM cells or be employed for routing in digital reconfigurable systems. Although memristor-based reconfigurable circuits can offer many advantages over the conventional CMOS designs, limitations in the utilization of memristor technologies such as electroforming or programming structures have not been thoroughly considered and discussed. This work looks into recent trends in exploiting memristor technologies in reconfigurable circuits and then discusses implementation challenges like memristor programming, reliability and operation of memristor-based memory cells for digitally reconfigurable circuits.
基于忆阻器的可重构电路:实现中的挑战
忆阻器技术的出现近年来受到了人们的广泛关注,因为它们具有很好的特性,有望成为后cmos时代的关键驱动力。忆阻器技术以其超低功耗、高密度性能和非易失性被认为是取代SRAM单元或用于数字可重构系统路由的最佳候选器件。尽管基于忆阻器的可重构电路可以提供许多优于传统CMOS设计的优点,但电铸或编程结构等忆阻器技术的局限性尚未得到充分考虑和讨论。这项工作着眼于在可重构电路中利用忆阻器技术的最新趋势,然后讨论实现挑战,如忆阻器编程,可靠性和基于忆阻器的存储单元的操作,用于数字可重构电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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