{"title":"Resistive termination low noise amplifier for bio-sensor applications","authors":"Maissa Daoud, H. Mnif, M. Ghorbel","doi":"10.1109/IDT.2016.7843048","DOIUrl":null,"url":null,"abstract":"A resistive termination low noise amplifier (RTLNA) for biosensor application is presented. The proposed RTLNA consists of merging the block of the input impedance matching with the amplification block to reduce the LNA size. Several techniques are used to reach this goal. The exploitation of the internal capacitors of the CMOS transistors helped us to avoid the use of capacitors. The choice of the resistive termination LNA is explained by the good performances that offers this architecture like high gain, good linearity and stability. The RTLNA comprising only one inductor, resistor and four CMOS transistors without affecting the circuit performances. In the ISM band (2.45GHz) the proposed LNA achieves a maximum voltage gain of about 19.6 dB, a minimum noise figure of 4.8dB and an IIP3 of +4dBm.","PeriodicalId":131600,"journal":{"name":"2016 11th International Design & Test Symposium (IDT)","volume":"28 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 11th International Design & Test Symposium (IDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2016.7843048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A resistive termination low noise amplifier (RTLNA) for biosensor application is presented. The proposed RTLNA consists of merging the block of the input impedance matching with the amplification block to reduce the LNA size. Several techniques are used to reach this goal. The exploitation of the internal capacitors of the CMOS transistors helped us to avoid the use of capacitors. The choice of the resistive termination LNA is explained by the good performances that offers this architecture like high gain, good linearity and stability. The RTLNA comprising only one inductor, resistor and four CMOS transistors without affecting the circuit performances. In the ISM band (2.45GHz) the proposed LNA achieves a maximum voltage gain of about 19.6 dB, a minimum noise figure of 4.8dB and an IIP3 of +4dBm.