P. Ondrejka, M. Sojková, V. Kotok, O. Zima, M. Kemény, P. Novák, M. Mikolášck
{"title":"Sulfurization of Ni-foam as a binder-free supercapacitor electrode","authors":"P. Ondrejka, M. Sojková, V. Kotok, O. Zima, M. Kemény, P. Novák, M. Mikolášck","doi":"10.1109/ASDAM55965.2022.9966779","DOIUrl":null,"url":null,"abstract":"This paper is dedicated to the fabrication and characterization of NiSx supercapacitor electrodes prepared from Ni-foam by means of a one-zone sulfurization process. The successful preparation of NiSx (x= 1 and 2) was confirmed by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). A specific capacitance of 105 mF/cm2 and 510 mF/cm2 was achieved on electrodes prepared at 400°C and 250 °C, respectively. Anodic and cathodic peaks indicate the pseudo-capacitive character of the charge storage mechanism for both samples prepared at different sulfurization temperature. It is proposed that the 4.9 times higher capacitance of sample prepared at 250°C is associated with a higher density of nickel sulfide nanoflakes in the structure.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM55965.2022.9966779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper is dedicated to the fabrication and characterization of NiSx supercapacitor electrodes prepared from Ni-foam by means of a one-zone sulfurization process. The successful preparation of NiSx (x= 1 and 2) was confirmed by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). A specific capacitance of 105 mF/cm2 and 510 mF/cm2 was achieved on electrodes prepared at 400°C and 250 °C, respectively. Anodic and cathodic peaks indicate the pseudo-capacitive character of the charge storage mechanism for both samples prepared at different sulfurization temperature. It is proposed that the 4.9 times higher capacitance of sample prepared at 250°C is associated with a higher density of nickel sulfide nanoflakes in the structure.