Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC)

A. Eblabla, B. Benakaprasad, Xu Li, D. Wallis, I. Guiney, C. Humphreys, K. Elgaid
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Abstract

In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-µm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding any substrate coupling effects. An insertion loss of less than 3 dB/mm was achieved for frequencies up to 750 GHz. To prove the effectiveness of the technology, a variety of test structures, passive components and antennas have been design, fabricated and characterized. High Q performance was demonstrated making such technology a strong candidate for future THz-MIC technology for many applications such as radar, communications, imaging and sensing.
太赫兹单片集成电路(THz-MIC)无源元件技术
在这项工作中,提出了一种可行的太赫兹单片集成电路(THz-MIC)无源元件和传输介质技术。所开发的技术基于屏蔽微带(S-MS),采用标准的单片微波集成电路兼容工艺。S-MS传输介质在屏蔽的金属化接地板上使用5µm的苯并环丁烯(BCB)层,避免了任何衬底耦合效应。在高达750 GHz的频率下,插入损耗低于3 dB/mm。为了证明该技术的有效性,已经设计、制造和表征了各种测试结构、无源元件和天线。高Q性能被证明使这种技术成为未来太赫兹- mic技术的强大候选,可用于雷达、通信、成像和传感等许多应用。
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