Enhancement of the optoelectronic performance of yellow light-emitting diodes

Abstract

The performance and efficiency of Indium Gallium Nitride (InGaN) yellow light-emitting diodes (LEDs) is improved by using graded-EBL (electron blocking layer) in the conventional LED structure. To improve the performance, radiative recombination must be enhanced by lowering electron leakage. EBL is designed and tailored to minimize electron leakage and, thus, increase the radiative recombination. This improves the overall optoelectronic properties of yellow LED. A simulation approach has been used to model this new structure and evaluate the results. Graded-EBL was designed and implemented in yellow LED and was evaluated for its performance using SiLENSeTM software. Simulated results concluded that the use of graded-EBL in the light-emitting diodes considerably raises the number of holes, which causes a 33% rise in the rate of radiative recombination. Additionally, the efficiency droop is considerably reduced from 57% to 50% in light-emitting diodes. As a result, the light-emitting diode with graded-EBL has better optoelectronic properties than conventional AlGaN-EBL. Internal quantum efficiency is increased by 17% in the suggested LED. This work illustrates high efficiency InGaN-based yellow LEDs with high radiative recombination and intensity by proposing a new structure of yellow LED consisting of graded-EBL.