Trends in tests and failure mechanisms in deep sub-micron technologies

Abstract

The increasing integration density of semiconductor devices and the usage of new materials and innovative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep submicron manufacturing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production