Extraction of Nonlinear X-Parameters from FDTD Simulation of a One-Port Device

Abstract

A formulation is developed for X-Parameters extraction of nonlinear devices when a finite-difference time-domain electromagnetic simulation is used. A simulation domain containing a diode is tested, and several excitation waveforms are applied to capture the diode's nonlinear behavior. Post-processing of simulation results allows for the extraction of X-Parameter values, and a good agreement is obtained when comparing the results from the developed procedure and a commercial simulator.