{"title":"Large-scale, computer-aided thermal design of power GaAs integrated devices and circuits","authors":"F. Bonani, G. Ghione, M. Pirola, C. Naldi","doi":"10.1109/GAAS.1994.636951","DOIUrl":null,"url":null,"abstract":"A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.