{"title":"Broadband, Fabrication-Tolerant Polarization Rotators in Silicon Nitride","authors":"Michael A. Barrow, T. Murphy, K. Grutter","doi":"10.1109/SiPhotonics55903.2023.10141898","DOIUrl":null,"url":null,"abstract":"We report a fabrication-tolerant and broad-band polarization rotator implemented on the SiN platform. Numerical studies predict approximately 99.7% polarization conversion efficiency for a device length of 185 micrometres. Preliminary experimental work suggests 90% conversion efficiency across the 1520-1620 nm waveband.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report a fabrication-tolerant and broad-band polarization rotator implemented on the SiN platform. Numerical studies predict approximately 99.7% polarization conversion efficiency for a device length of 185 micrometres. Preliminary experimental work suggests 90% conversion efficiency across the 1520-1620 nm waveband.