Inverse approach to characterize die-attach thermal interface of light emitting diodes

Abstract

An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. The results confirm that the proposed approach offers a measurement accuracy of 0.01 K/W.