{"title":"Field effect transistor-based pressure sensor with dielectric elastomer, for robotic hand","authors":"G. Moagăr-Poladian, V. Moagar-Poladian","doi":"10.1109/CAS56377.2022.9934333","DOIUrl":null,"url":null,"abstract":"We present the concept and simulation results of a pressure sensor based on a field effect transistor having improved performance compared to its fully inorganic counterparts. Benefits and limitations are presented as well as ways of avoiding some of them. Influence of temperature is discussed.","PeriodicalId":380138,"journal":{"name":"2022 International Semiconductor Conference (CAS)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS56377.2022.9934333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present the concept and simulation results of a pressure sensor based on a field effect transistor having improved performance compared to its fully inorganic counterparts. Benefits and limitations are presented as well as ways of avoiding some of them. Influence of temperature is discussed.