Compact ZnO nanorods composed film by re-growth of ZnO nanorods and Ar plasma treatment

Wen-Hau Wu, C. Chao, S. Hung, Ching-Fuh Lin
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Abstract

Compact, film-like ZnO nanorods were fabricated by re-growth of ZnO nanorods on base ZnO nanorods using a simple low-temperature hydrothermal technique. The Ar plasma treatment was employed to blur the boundaries of re-grown ZnO nanorods. The morphology, crystalline and electrical properties of both re-grown and Ar plasma treated re-grown ZnO nanorods were studied by SEM, AFM, XRD, and four point probe measurement. The SEM images and AFM analysis revealed the increasing diameter and compact arrangement of re-grown ZnO nanorods. The XRD analysis showed highly uniform [002] orientation. The resistivity of re-grown ZnO nanorods composed film is 3.906Ω*cm while resistivity of re-grown ZnO nanorods composed film with Ar plasma treatment is 2.231Ω*cm which indicates that the Ar plasma treatment blurred the boundaries therefore decreasing the resistivity. The optical transmittance of as-grown and re-grown ZnO nanorods in the visible range was higher than 80%.
采用ZnO纳米棒再生长和氩等离子体处理制备了紧凑的ZnO纳米棒薄膜
采用简单的低温水热技术将ZnO纳米棒在碱性ZnO纳米棒上再生长,制备了致密的薄膜状ZnO纳米棒。采用氩等离子体处理模糊了再生ZnO纳米棒的边界。采用扫描电镜(SEM)、原子力显微镜(AFM)、x射线衍射(XRD)和四点探针测量等方法研究了再生和氩等离子体处理再生ZnO纳米棒的形貌、晶体和电学性能。扫描电镜和原子力显微镜分析表明,再生ZnO纳米棒的直径增加,排列紧凑。XRD分析显示取向高度均匀[002]。再生长ZnO纳米棒复合膜的电阻率为3.906Ω*cm,而经Ar等离子体处理的再生长ZnO纳米棒复合膜的电阻率为2.231Ω*cm,说明Ar等离子体处理模糊了边界,从而降低了电阻率。生长和再生长的ZnO纳米棒在可见光范围内的透光率均大于80%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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