Impact of back-gate bias on DC and RF characteristics in SiGe:C HBTs fabricated on thin-film SOI

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404388

Jing Chen, Tao Yu, Jiexin Luo, Qingqing Wu, Z. Chai, Xi Wang

引用次数: 0

Abstract

The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in RC and hysteresis reduction, and further improves the maximum fT from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias on electrical characteristics, which further approved by calibrated Sentaurus simulations.

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反向偏压对薄膜SOI制备SiGe:C hbt直流和射频特性的影响

研究了反向偏压对掺杂C的绝缘体上硅(SOI)薄膜SiGe HBTs (SiGe:C HBTs)直流和射频特性的影响。实验结果表明，正衬底偏压在减小RC和迟滞方面非常有效，并进一步将最大fT从16 ghz提高到53GHz。建立了分析关系来量化衬底偏置对电特性的影响，并通过校准的Sentaurus模拟进一步证实了这一点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE International SOI Conference (SOI)

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