F. Herdl, Maximillian J. Kueddelsmann, A. Schels, M. Bachmann, S. Edler, Dominik Wohlfartsstätter, F. Düsberg, Alexander Prugger, Michael Dillig, F. Dams, R. Schreiner, C. Coileáin, S. Zimmermann, A. Pahlke, G. Duesberg
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引用次数: 0
Abstract
In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.
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